A Reinforcement Learning Approach for Improved Photolithography Schedules

Loading...
Publication Logo

Date

2023

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers Inc.

Open Access Color

Green Open Access

No

OpenAIRE Downloads

OpenAIRE Views

Publicly Funded

Yes
Impulse
Average
Influence
Average
Popularity
Average

Research Projects

Journal Issue

Abstract

A Reinforcement Learning (RL) model is applied for photolithography schedules with direct consideration of reentrant visits. The photolithography process is mainly regarded as a bottleneck process in semiconductor manufacturing, and improving its schedules would result in better performances. Most RL-based research do not consider revisits directly or guarantee convergence. A simplified discrete event simulation model of a fabrication facility is built, and a tabular Q-learning agent is embedded into the model to learn through scheduling. The learning environment considers states and actions consisting of information on reentrant flows. The agent dynamically chooses one rule from a pre-defined rule set to dispatch lots. The set includes the earliest stage first, the latest stage first, and 8 more composite rules. Finally, the proposed RL approach is compared with 7 single and 8 hybrid rules. The method presents a validated approach in terms of overall average cycle times. © 2023 IEEE.

Description

2023 Winter Simulation Conference, WSC 2023 -- 10 December 2023 through 13 December 2023 -- 196982

Keywords

Fields of Science

Citation

WoS Q

N/A

Scopus Q

Q4
OpenCitations Logo
OpenCitations Citation Count
N/A

Source

Proceedings - Winter Simulation Conference

Volume

Issue

Start Page

2136

End Page

2147
PlumX Metrics
Citations

Scopus : 2

Captures

Mendeley Readers : 2

SCOPUS™ Citations

2

checked on Mar 16, 2026

Page Views

2

checked on Mar 16, 2026

Google Scholar Logo
Google Scholar™
OpenAlex Logo
OpenAlex FWCI
1.0398

Sustainable Development Goals

SDG data could not be loaded because of an error. Please refresh the page or try again later.