Kucukcan, BegumnurSaglam, Ozge2025-09-252025-09-2520252199-692Xhttps://doi.org/10.1002/cnma.202500331https://hdl.handle.net/20.500.14365/6426This work explores the integration of 2D Ca2NaNb4O13 - perovskite nanosheets into ultrathin dielectric films for flexible and transparent capacitors. Using Langmuir-Blodgett assembly technique, uniform nanofilms with precise thickness control are deposited on indium tin oxide-coated polyethylene terephthalate substrates. Capacitors fabricated with 10 and 20 layers of these nanosheets demonstrate stable dielectric performance and low leakage currents even under mechanical bending, offering capacitance densities of 0.42 and 0.27 mu F cm-2, respectively. Surface and interface characterization confirms the high-quality film formation and effective removal of exfoliation residues. Despite challenges arising from substrate roughness, the results validate the potential of oxide nanosheets for application in miniaturized, high-kappa flexible electronics.eninfo:eu-repo/semantics/closedAccessDielectric NanofilmsFlexible ElectronicsLangmuir-Blodgett TechniquePerovskite NanosheetsFlexible Transparent Nanocapacitors Based on High-k Perovskite NanosheetsArticle10.1002/cnma.2025003312-s2.0-105014623358